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參數(shù)資料
| 型號(hào)： | BLV2047 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | BLV2047 |
1999 Jun 09
4
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit.
Note
1.
CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at
±
885 kHz
offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz.
Ruggedness in class-AB operation
The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f
1
= 2000.0 MHz; f
2
= 2000.1 MHz; V
CE
= 26 V; I
CQ
= 300 mA; P
L
= 60 W (PEP); T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
8.5
η
C
(%)
≥
40
d
im
(dBc)
CW, class-AB
2000
26
300
60
2-tone, class-AB
f
1
= 2000.0
f
2
= 2000.1
2000
26
300
60 (PEP)
≥
9
≥
33
≤
30
CDMA, class-AB
26
500
12.5
typ. 9
typ. 22
≤
46
(1)
Fig.4
Power gain and collector efficiency as a
function of load power; typical values.
V
CE
= 26 V; I
CQ
= 300 mA; f = 2000 MHz.
handbook, halfpage
(dB)
0
40
20
60
80
100
PL (W)
η
C
(%)
50
η
C
0
10
8
6
2
4
60
0
40
30
20
10
MBK398
Gp
Fig.5
Load power as a function of drive power;
typical values.
I
CQ
= 300 mA; f = 2000 MHz.
(1) V
CE
= 28 V.
(2) V
CE
= 26 V.
(3) V
CE
= 24 V.
handbook, halfpage
(W)
0
8
4
12
PD (W)
0
80
60
40
20
MBK399
(1)
(2)
(3)
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