參數(shù)資料
型號: BLF543
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power MOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-171A, 6 PIN
文件頁數(shù): 4/14頁
文件大?。?/td> 96K
代理商: BLF543
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.5
1
4
100
UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(th)
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 5 mA
V
GS
= 0; V
DS
= 28 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 20 mA; V
DS
= 10 V
I
D
= 20 mA; V
DS
= 10 V
65
1
V
mA
μ
A
V
mV
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
I
D
= 0.6 A; V
DS
= 10 V
I
D
= 0.6 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
300
450
1.7
2.4
16
12
3.2
2.5
mS
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
T.C.
(mV/K)
0
2
4
2
MDA491
1
ID (A)
10
2
10
1
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
0
2
1
0
5
VGS (V)
ID
(A)
10
20
15
MDA495
相關(guān)PDF資料
PDF描述
BLF544B UHF push-pull power MOS transistor
BLF545 UHF push-pull power MOS transistor
BLF547 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF6G20-180P UHF power LDMOS transistor
BLM31AF700SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 70OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF544 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF544,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 20W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF544B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF push-pull power MOS transistor
BLF545 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF push-pull power MOS transistor
BLF546 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray