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參數(shù)資料
| 型號： | BLF20 |
| 廠商： | Littelfuse, Inc. |
| 元件分類： | 保險絲 |
| 英文描述： | Axial Lead and Cartridge Fuses - Midget |
| 中文描述： | 軸向引線和墨盒保險絲-侏儒 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLF20 |
2002 May 17
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-70
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed for broadband operation (2 to 2.2 GHz)
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
Common source class-AB operation for PCN, PCS,
W-CDMA, CDMA and multicarrier applications in the
2000 to 2200 MHz frequency range, operating at 28 V
supply voltage.
DESCRIPTION
70 W LDMOS power transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap.
Typical W-CDMA performance for a two-carrier 3GPP
W-CDMA signal (test model 1, 64 channels) with 66%
clipping (peak/average ratio: 8.5 dB at 0.01% per carrier,
probability on CCDF) at a supply voltage of 28 V, an I
DQ
of
1 A and a channel bandwidth of 3.84 MHz (ACLR and d
im3
measured in 3.84 MHz bandwidth, adjacent channels
measured at
±
5 MHz):
Frequency: 2135 to 2145 MHz
Average output power: 10 W
Gain: 13 dB
Efficiency: 20%
ACLR:
40 dB
d
im3
:
3 dBc.
PINNING - SOT502A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
65 (PEP)
>11
>30
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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