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參數(shù)資料
| 型號： | BLF2022-70 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A |
| 中文描述： | 晶體管| MOSFET的| N溝道| 65V的五（巴西）直| 9A條（?。﹟的SOT - 502A |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 109K |
| 代理商： | BLF2022-70 |
2002 May 17
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-70
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed for broadband operation (2 to 2.2 GHz)
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
Common source class-AB operation for PCN, PCS,
W-CDMA, CDMA and multicarrier applications in the
2000 to 2200 MHz frequency range, operating at 28 V
supply voltage.
DESCRIPTION
70 W LDMOS power transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap.
Typical W-CDMA performance for a two-carrier 3GPP
W-CDMA signal (test model 1, 64 channels) with 66%
clipping (peak/average ratio: 8.5 dB at 0.01% per carrier,
probability on CCDF) at a supply voltage of 28 V, an I
DQ
of
1 A and a channel bandwidth of 3.84 MHz (ACLR and d
im3
measured in 3.84 MHz bandwidth, adjacent channels
measured at
±
5 MHz):
Frequency: 2135 to 2145 MHz
Average output power: 10 W
Gain: 13 dB
Efficiency: 20%
ACLR:
40 dB
d
im3
:
3 dBc.
PINNING - SOT502A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
65 (PEP)
>11
>30
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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| BLF2022-90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
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| BLF2043F | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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