參數(shù)資料
型號(hào)： BLF2022-125
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-3
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 57K
代理商： BLF2022-125
2003 Mar 07
4
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with
68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF.
RF performance at T
h
= 25
°
C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64
channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per
channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
common-source power gain
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV) single
carrier W-CDMA;VSWR = 5:1 through
all phases
11
12
dB
η
D
drain efficiency
17
19
%
ACPR
adjacent channel power ratio
49
39
dBc
I
RL
input return loss
10
6
dB
ψ
output mismatch
no degradation in RF
performance before and after
test
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
common-source power gain
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA; ACPR is measured at
f
1
=
5 MHz and f
2
= +5 MHz
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA; ACPR is measured at
f
1
=
10 MHz and f
2
= +10 MHz
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
12
dB
η
D
drain efficiency
19
%
ACPR
adjacent channel power ratio
40
dBc
d
3
third order intermodulation
distortion
36
dB
I
RL
input return loss
10
dB
相關(guān)PDF資料
PDF描述
BLF2022-40 UHF power LDMOS transistor
BLF2022-70 TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A
BLF2043F TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 2.2A I(D) | FO-67VAR
BLF20 Axial Lead and Cartridge Fuses - Midget
BLF2043 UHF power LDMOS transistor(UHF 功率 LDMOS晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF2022-30 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF2022-30,112 制造商:NXP Semiconductors 功能描述:
BLF2022-30,135 制造商:NXP Semiconductors 功能描述:
BLF2022-40 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF2022-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*