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參數(shù)資料
| 型號(hào)： | BLF2022-125 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | BLF2022-125 |
2003 Mar 07
2
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 1 A
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR =
42 dBc at 3.84 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT634A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
1
3
2
Top view
MBL367
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L avg
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
typ
42
single carrier W-CDMA
2110 to 2170
28
30
typ 12
typ 19
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
15
tbd
+150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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參數(shù)描述 |
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| BLF2022-30 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power LDMOS transistor |
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| BLF2022-30,135 | 制造商:NXP Semiconductors 功能描述: |
| BLF2022-40 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF2022-70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A |
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