參數(shù)資料
型號: BLF1048
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 3/8頁
文件大?。?/td> 45K
代理商: BLF1048
2000 Feb 02
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1048
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-h
= 1.15 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF1048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; f = 960 MHz at rated load power.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
20
9
+150
200
V
V
A
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
T
h
= 25
°
C; P
tot
= 100 W;
note 1
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
4
150
92
74
3
MAX.
5
10
250
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 1.4 mA
V
DS
= 10 V; I
D
= 140 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
20 V; V
DS
= 0
V
DS
= 10 V; I
D
= 7 A
V
GS
= V
GSth
+ 9 V; I
D
= 7 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
4
25
V
V
μ
A
A
nA
S
m
pF
pF
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
26
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f
1
= 960; f
2
= 960.1
960
26
26
90 (PEP)
90
>14
>14
>35
>45
相關(guān)PDF資料
PDF描述
BLF1049 Base station LDMOS transistor
BLF2022-120 UHF push-pull power LDMOS transistor
BLF225 VHF power MOS transistor
BLF247B ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF276 VHF power MOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF1049 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Base station LDMOS transistor
BLF10H6600PSU 制造商:NXP Semiconductors 功能描述:MOSF RF DL 110V 8.5A LDMOS 制造商:NXP Semiconductors 功能描述:BLF10H6600PS/LDMOST/TUBE-BULK/
BLF10H6600PU 制造商:NXP Semiconductors 功能描述:BLF10H6600P/LDMOST/TUBE-BULK// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSF RF DL 110V 8.5A LDMOS
BLF10M6135U 制造商:NXP Semiconductors 功能描述:BLF10M6135/LDMOST/TUBE-BULK// - Rail/Tube 制造商:NXP Semiconductors 功能描述:IC TRANS LDMOS 135W SOT502A
BLF10M6160U 制造商:NXP Semiconductors 功能描述:BLF10M6160/LDMOST/TUBE-BULK// - Rail/Tube 制造商:NXP Semiconductors 功能描述:IC TRANS LDMOS 160W SOT502A