- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373021 > BLF0810-180 (NXP SEMICONDUCTORS) Base station LDMOS transistors PDF資料下載
參數(shù)資料
| 型號： | BLF0810-180 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Base station LDMOS transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 117K |
| 代理商： | BLF0810-180 |
2003 Jun 12
5
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
handbook, halfpage
(%)
0
50
100
150
0
40
30
20
10
17
14
16.5
16
15.5
14.5
15
MDB158
gain
(dB)
PL (PEP) (W)
(4)
η
(1,2,3)
(5)
(6)
Fig.3
2-tone power gain and efficiency as
functions of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
(1)
η
at T
h
=
40
°
C.
(2)
η
at T
h
= 20
°
C.
(3)
η
at T
h
= 80
°
C.
(4) gain at T
h
=
40
°
C.
(5) gain at T
h
= 20
°
C.
(6) gain at T
h
= 80
°
C.
handbook, halfpage
d3
(dBc)
0
50
100
150
30
50
60
40
MDB159
(3)
(2)
(1)
PL (PEP) (W)
Fig.4
Third order intermodulation distortion as a
function of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
handbook, halfpage
d5
(dBc)
0
50
100
150
40
60
70
50
MDB160
(1)
(3)
(2)
PL (PEP) (W)
Fig.5
Fifth order intermodulation distortion as a
function of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
handbook, halfpage
0
50
60
70
50
100
150
MDB161
(1)
(2)
(3)
PL (PEP) (W)
d7
(dBc)
Fig.6
Seventh order intermodulation distortion as
a function of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 890.0 MHz; f
2
= 890.1 MHz.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF0810S-180 | Base station LDMOS transistors |
| BLF1047 | UHF power LDMOS transistor |
| BLF1048 | UHF power LDMOS transistor |
| BLF1049 | Base station LDMOS transistor |
| BLF2022-120 | UHF push-pull power LDMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF0810-90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Base station LDMOS transistors |
| BLF0810S-180 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Base station LDMOS transistors |
| BLF0810S-90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Base station LDMOS transistors |
| BLF082 | 功能描述:FILTER RFI 82PF SMD RoHS:是 類別:濾波器 >> EMI/RFI（LC、RC 網(wǎng)絡(luò)） 系列:BLF 標(biāo)準(zhǔn)包裝:4,500 系列:- 類型:低通 技術(shù):LC 通道數(shù):10 中心 / 截止頻率:- 衰減值:45dB @ 800MHz ~ 2.2GHz 電阻 - 通道 (Ohms):90 電流:25mA 值:C = 28pF（總計(jì)） ESD 保護(hù):是 濾波器階數(shù):5th 應(yīng)用:移動設(shè)備的數(shù)據(jù)線路 封裝/外殼:24-UFBGA 尺寸/尺寸:0.083" L x 0.083" W（2.10mm x 2.10mm） 高度:0.026"（0.65mm） 包裝:帶卷 (TR) 工作溫度:-40°C ~ 85°C 其它名稱:SP000454322 |
| BLF0910H6L500U | 功能描述:RF MOSFET LDMOS 50V SOT502A 制造商:ampleon usa inc. 系列:- 包裝:托盤 零件狀態(tài):在售 晶體管類型:LDMOS 頻率:900MHz ~ 930MHz 增益:19dB 電壓 - 測試:50V 額定電流:2.8μA 噪聲系數(shù):- 電流 - 測試:90mA 功率 - 輸出:500W 電壓 - 額定:114.5V 封裝/外殼:SOT-502A 供應(yīng)商器件封裝:SOT502A 標(biāo)準(zhǔn)包裝:60 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。