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參數資料
| 型號： | BLC6G20-75 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT895-1, 3 PIN |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BLC6G20-75 |
BLC6G20-75_6G20LS-75_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLC6G20-75 and BLC6G20LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 550 mA; P
L
= 75 W (CW); f = 1990 MHz.
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance
from junction to case
Conditions
T
case
= 80
°
C;
P
L
= 75 W
Type
BLC6G20-75
BLC6G20LS-75
Min
<tbd> <tbd> <tbd>
K/W
<tbd> <tbd> <tbd>
K/W
Typ
Max
Unit
Table 6:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 100 mA
V
DS
= 28 V; I
D
= 550 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
<tbd>
2
<tbd> <tbd> <tbd>
V
-
-
15.5
18
<tbd>
V
3
-
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
-
7
0.15
300
-
0.185
nA
S
C
rs
-
1.6
-
pF
Table 7:
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 550 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit
Symbol
Parameter
P
L(AV)
average output power
G
p
power gain
IRL
input return loss
η
D
drain efficiency
ACPR
400
adjacent channel power ratio (400 kHz) P
L(AV)
= 29.5 W
ACPR
600
adjacent channel power ratio (600 kHz) P
L(AV)
= 29.5 W
EVM
rms
RMS EDGE signal distortion error
EVM
M
peak EDGE signal distortion error
Application information
Conditions
Min
-
17.5
-
36.5
-
-
-
-
Typ
29.5
19
10
38.5
62.2
60
72
1.5
4.8
Max
-
20
7
-
Unit
W
dB
dB
%
dBc
dBc
%
%
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
70
2.3
8
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
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| BLC6G22-130 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
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