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參數(shù)資料
| 型號： | BLC6G10-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-895-1, 2 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 53K |
| 代理商： | BLC6G10-200 |
BLC6G10-200_6G10LS-200_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
3 of 9
Philips Semiconductors
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLC6G10-200 and BLC6G10LS-200 are capable of withstanding a load mismatch
corresponding to VSWR = <tbd> through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 1400 mA; P
L
= <tbd>; f = 894 MHz.
Table 5:
Symbol
R
th(j-case)
thermal resistance
from junction to case
Thermal characteristics
Parameter
Conditions
T
case
= 80
°
C;
P
L
= 40 W
Type
BLC6G10-200
BLC6G10LS-200
Min
<tbd>
<tbd>
Typ
<tbd>
0.43
Max
<tbd>
0.52
Unit
K/W
K/W
Table 6:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 150 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
<tbd>
<tbd>
-
40
2
<tbd>
-
45
<tbd>
<tbd>
5
-
V
V
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
-
<tbd>
<tbd>
450
-
-
nA
S
C
rs
-
<tbd>
-
pF
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1400 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol
Parameter
P
L(AV)
average output power
G
p
power gain
IRL
input return loss
η
D
drain efficiency
ACPR
adjacent channel power ratio
Application information
Conditions
Min
-
18.5
-
25
-
Typ
40
20
6.5
27
39
Max
-
21.5
4.5
-
36
Unit
W
dB
dB
%
dBc
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
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