參數(shù)資料
型號(hào): BLA1011-200
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | SOT-502A
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)決策支持系統(tǒng)|采用SOT - 502A
文件頁數(shù): 4/12頁
文件大?。?/td> 70K
代理商: BLA1011-200
2001 May 15
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-200
handbook, halfpage
Gp
(dB)
0
Gp
η
D
(%)
η
D
10
15
5
0
80
40
60
20
0
50
250
PL (W)
MGW033
100
150
200
Fig.2
Power gain and efficiency as functions of
load power; typical values.
V
DS
= 36 V; I
= 150 mA; f = 1060 MHz;
t
p
= 50
μ
s;
δ
= 2 %.
handbook, halfpage
(W)
200
0
150
50
100
0
PD (W)
MGW034
2
4
6
8
Fig.3
Load power as a function of drive power;
typical values.
V
DS
= 36 V; I
= 150 mA; f = 1060 MHz;
t
p
= 50
μ
s;
δ
= 2 %.
handbook, halfpage
Gp
(dB)
0
12
16
4
8
0
50
PL (W)
MGW035
100
150
200
250
IDQ = 1.5 A
150 mA
Fig.4
Power gain as a function of load power;
typical values.
V
DS
= 36 V; f = 1060 MHz; t
p
= 50
μ
s;
δ
= 2 %.
handbook, halfpage
(W)
200
0
PL
150
50
100
0
20
Gp
(dB)
12
16
4
8
0
Gp
1
VGS (V)
MGW036
2
3
4
5
V
= 36 V; I
= 150 mA; P
= 5.5 W;
f = 1060 MHz; t
p
= 50
μ
s;
δ
= 2 %.
Fig.5
Load power and power gain as functions of
gate-source voltage; typical values.
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