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參數(shù)資料
| 型號： | BGY280 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT559A, 16 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 156K |
| 代理商： | BGY280 |
2000 Nov 15
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D1,2
= 0 dBm; V
S1
= V
S2
= 3.6 V; V
C1,2
≤
2.2 V; T
mb
= 25
°
C; t
p
= 575
μ
s;
δ
= 2 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
34.5
34
32.5
32
40
33
TYP.
35.5
35
33.5
33
35.5
33.5
45
38
MAX.
UNIT
μ
A
mA
dBm
dBm
dBm
dBm
dB
dB
%
%
dBc
dBc
I
L
I
CM1
, I
CM2
leakage current
peak control current
V
C1,2
= 0.2 V
10
2
40
35
3 : 1
P
L1
load power GSM 900
V
C1
= 2.2 V
V
C1
= 2.2 V; V
S1
= 3.2 V; T
mb
= 25
°
C
V
C2
= 2.2 V
V
C2
= 2.2 V; V
S1
= 3.2 V; T
mb
= 25
°
C
P
L1
= 35.5 dBm
P
L2
= 33 dBm
P
L1
= 35 dBm
P
L2
= 32 dBm
P
L1
= 34 dBm
P
L2
= 32 dBm
V
S1,2
= 3.2 to 5 V; P
L1
= 34 dBm;
P
L2
= 32 dBm
V
S1,2
= 3.2 to 5 V; V
C1,2
≤
0.5 V
P
L2
load power GSM 1800
P1
G
P2
η
1
η
2
power gain GSM900
power gain GSM1800
efficiency GSM900
efficiency GSM1800
harmonics GSM900
harmonics GSM1800
H
2
, H
3
VSWR
in
input VSWR of active device
input VSWR of inactive
device
isolation GSM900
isolation GSM1800
second harmonic isolation
from GSM900 into GSM1800
maximum slope
carrier rise time
8 : 1
V
C1,2
= 0.5 V; P
D1,2
= 3 dBm
V
C1,2
= 0.5 V; P
D1,2
= 3 dBm
P
L1
= 35 dBm
54
42
21
37
37
20
dBm
dBm
dBm
5 dBm < P
L1,2
< P
L max
P
L1
= 6 to 34 dBm; P
L2
= 4 to 32 dBm;
time to settle within
0.5 dB of final P
L
P
L1
= 6 to 34 dBm; P
L2
= 4 to 32 dBm;
time to fall below
37 dBm
P
L1
≤
34 dBm; bandwidth = 100 kHz;
f = 925 - 935 MHz; f
c
= 897.5 MHz
P
L1
≤
34 dBm; bandwidth = 100 kHz;
f = 935 - 960 MHz; f
c
= 897.5 MHz
P
L2
≤
32 dBm; bandwidth = 100 kHz;
f = 1805 - 1880 MHz; f
c
= 1747.5 MHz
P
D1,2
=
0.5 to 0.5 dBm;
P
L1,2
= constant during measurement
for P
L1
= 6 to 34 dBm and
P
L2
= 4 to 32 dBm
P
L1
= 6 to 34 dBm; P
L2
= 4 to 32 dBm;
f = 100 kHz; P
D1,2
= 5.4 %
120
1.5
200
2
dB/V
μ
s
t
r
t
f
carrier fall time
1.5
2
μ
s
P
n
noise power GSM900
71
dBm
82
80
dBm
noise power GSM1800
80
73
dBm
AM/PM conversion
6
deg/dB
AM/AM conversion
25
%
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