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參數(shù)資料
| 型號： | BGY280 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT559A, 16 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 156K |
| 代理商： | BGY280 |
2000 Nov 15
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
FEATURES
Dual band GSM amplifier
3.6 V nominal supply voltage
33.5 dBm output power for GSM1800
35.5 dBm output power for GSM900
Easy output power control by DC voltage.
Internal input and output matching.
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
PINNING - SOT559A
PIN
DESCRIPTION
1,2,3,6,9,10,11,14
4
5
7
8
12
13
15
16
Ground
RF output 2 (1800 MHz)
V
S2
(1800 MHz)
V
S1
(900 MHz)
RF output 1 (900 MHz)
RF input 1 (900 MHz)
V
C1
(900 MHz)
V
C2
(1800 MHz)
RF input 2 (1800 MHz)
Fig.1 Simplified outline
Bottom view
8
7
5
6
4
12
13
15
14
16
1
2
3
11
10
9
MBL031
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
V
S
(V)
V
C
(V)
P
L
(dBm)
G
p
(dB)
η
(%)
Z
S
, Z
L
(
)
Pulsed;
δ
= 2 : 8
880 to 915
1710 to 1785
3.6
3.6
≤
2.2
≤
2.2
typ. 35.5
typ. 33.5
typ. 35.5
typ. 33.5
47
40
50
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S1
, V
S2
DC supply voltage
V
C1,2
= 0; RF
IN
= off
V
C1,2
> 0.5 V; RF
IN
= on
40
30
7
5.5
3
10
4
3
+100
+100
V
V
V
mW
W
W
°
C
°
C
V
C1
, V
C2
P
D1
, P
D2
P
L1
P
L2
T
stg
T
mb
DC control voltage
input drive power
load power 1
load power 2
storage temperature
operating mounting base temperature
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