參數(shù)資料
型號: BGY205
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier module
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: SOT-321B, 4 PIN
文件頁數(shù): 5/11頁
文件大?。?/td> 64K
代理商: BGY205
1996 May 21
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
Fig.6
Load power as a function of frequency;
typical values.
Z
S
= Z
L
= 50
; P
D
= 3 dBm; V
S
= 6 V;
V
C
= 4 V; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
(W)
880
890
900
920
0
4
MBG736
910
f (MHz)
3
2
1
Fig.7
Control voltage as a function of
frequency; typical values.
Z
S
= Z
L
= 50
; P
D
= 3 dBm; V
S
= 6 V;
P
L
= 3.5 W; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
(V)
880
890
900
920
0
4
MBG735
910
f (MHz)
3
2
1
Fig.8
Harmonics as a function of
frequency; typical values.
Z
S
= Z
L
= 50
; P
D
= 3 dBm; V
S
= 6 V;
P
L
= 3.5 W; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
80
70
60
50
40
30
880
890
900
910
f (MHz)
H
2
H
3
MBG738
H2
(dBc)
3
920
Fig.9
Control loop phase as a function of
frequency on the control pin; typical values.
Z
S
= Z
L
= 50
; P
D
= 3 dBm; V
S
= 6 V; P
L
= 15 to 35.4 dBm;
f = 880 to 915 MHz; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s; R1 = 0; C1 = 0.
handbook, halfpage
phase
(deg)
0
1
2
f (MHz)
3
10
50
70
30
MBG734
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