參數(shù)資料
型號: BGY205
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier module
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: SOT-321B, 4 PIN
文件頁數(shù): 3/11頁
文件大小: 64K
代理商: BGY205
1996 May 21
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 3 dBm; V
S
= 6 V; V
C
4 V; f = 880 to 915 MHz; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s; unless
otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
40
30
8.5
4.5
7
4
+100
+100
V
V
mW
W
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
μ
A
μ
A
W
dB
%
dBc
dBc
I
Q
I
C
P
L
G
p
η
H
2
H
3
VSWR
in
leakage current
control current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
V
C
= 0.5 V
adjust V
C
for P
L
= 3.5 W
V
C
= 4 V
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
P
D
= 0 to 6 dBm; V
S
= 5 to 8.5 V;
V
C
= 0 to 4 V; P
L
3.5 W;
VSWR
6 : 1 through all phases
V
C
= 0.5 V
R1 = 0; C1 = 0; see Fig.16
P
D
with 3% AM; f = 100 kHz;
P
L
= 3.5 mW to 3.5 W
P
L
= 3.5 W; bandwidth = 30 kHz;
20 MHz above transmitter band
V
S
= 8.5 V; adjust V
C
for P
L
= 3.5 W;
VSWR
10 : 1 through all phases
3.5
32.5
40
45
100
500
40
40
2 : 1
60
dBc
isolation
control bandwidth
AM-AM conversion
1
36
12
dBm
MHz
%
P
n
noise power
85
dBm
ruggedness
no degradation
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