參數(shù)資料
型號： BGF944
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： GSM900 EDGE power module
中文描述： 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： PLASTIC, SOT-365C, 3 PIN
文件頁數(shù)： 3/12頁
文件大?。?/td> 91K
代理商： BGF944
2003 Jun 06
3
Philips Semiconductors
Product specification
GSM900 EDGE power module
BGF944
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
mb
= 25
°
C; V
S
= 26 V; P
L
= 2.5 W; f = 920 to 960 MHz; Z
S
= Z
L
= 50
;
unless otherwise specified.
Note
1.
G
Pi
is small signal in-band gain.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
P
D
P
L
T
stg
T
mb
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
30
20
30
100
24
+100
+90
V
mW
W
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DQ
P
1dB
G
p
G
p freq
quiescent current (pin 2)
load power
power gain
gain flatness over frequency
range
gain flatness over power band P
L
= 25 mW up to 2.5 W
out of band gain
P
D
= 0 mW
at 1 dB gain compression
13
27
280
17
29
0.2
320
31
1
mA
W
dB
dB
G
p pwr
G
OB
0.8
0.2
+0.2
G
Pimax
+ 1
note 1
2 : 1
60
dB
dB
small signal, P
D
= 0 dBm;
f < 920 MHz, f > 960 MHz
VSWR
in
IMD
r
input VSWR
reverse intermodulation
1.6 : 1
66
f
i
= f
c
±
200 kHz;
P
carrier
= 2.5 W;
P
interference
=
40 dBc;
dBc
H
2
H
3
second harmonic
third harmonic
stability
all spurious outputs more than 60 dB
below desired signal
no degradation in output power
38
61
35
58
dBc
dBc
VSWR
≤
3 : 1 through all
phases; V
S2
= 25 to 28 V
VSWR = 10 : 1 through all
phases; P
L
= 5 W
ruggedness
EDGE
(P
L
= 2.5 W average)
η
efficiency
SR200
spectral regrowth;
EDGE GSM signal
SR400
EVM
rms
rms EDGE signal distortion
EVM
M
peak EDGE signal distortion
Intermodulation distortion
(P
L
= 2.5 W average)
12
15
36
65
0.4
1.2
35
63
1.2
4
%
dBc
dBc
%
%
200 kHz
400 kHz
d
3
d
5
d
7
third order intermodulation
fifth order intermodulation
seventh order intermodulation
carrier spacing = 200 kHz
45
52
60
40
dBc
dBc
dBc
相關(guān)PDF資料
PDF描述
BGX881 CATV amplifier module
BGY1085 CATV amplifier module
BGY120A UHF amplifier modules
BGY120B UHF amplifier modules
BGY122A UHF amplifier modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BGF944,127 功能描述:射頻放大器 LDMOS MOD RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
BGFL154-360 制造商:INSTRUMENT TRANSFORMER 功能描述:GROUND FAULT RELAY 30-360 AMP
BGG140112 制造商:ITT Interconnect Solutions 功能描述:BGG140112 / 140112-0000 / Rack & Panel
BGG140112-1 制造商:ITT Interconnect Solutions 功能描述:BGG140112-1 / 140112-0001 / Rack & Panel
BGG140112-10 制造商:ITT Interconnect Solutions 功能描述:SEE BGG2P272-A00 - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*