參數(shù)資料
型號(hào): BGD108
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: PV SERIES
中文描述: 40 MHz - 450 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁數(shù): 3/8頁
文件大?。?/td> 47K
代理商: BGD108
1997 Apr 10
3
Philips Semiconductors
Product specification
CATV amplifier module
BGD108
CHARACTERISTICS
Table 1
Bandwidth 40 to 450 MHz; T
case
= 35
°
C; Z
S
= Z
L
= 75
; V
B
= +24 V
Notes
1.
f
p
= 55.25 MHz; V
p
= 46 dBmV;
f
q
= 391.25 MHz; V
q
= 46 dBmV;
measured at f
p
+ f
q
= 446.5 MHz.
f
p
= 440.25 MHz; V
p
=V
o
;
f
q
= 447.25 MHz; V
q
= V
o
6 dB;
f
r
= 449.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 438.25 MHz.
The module normally operates at V
B
= +24 V, but is able to withstand supply transients up to +30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 450 MHz
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 445.25 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 55.25 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 446.5 MHz
note 1
d
im
=
60 dB; note 2
f = 450 MHz
DC value; V
B
= +24 V; note 3
35
36.5
0.2
20
19
18
20
19
18
37
2.2
±
0.4
64
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
CTB
composite triple beat
X
mod
cross modulation
65
dB
CSO
composite second order
distortion
62
dB
d
2
V
o
F
I
tot
second order distortion
output voltage
noise figure
total current consumption
67
73
7
625
dB
dBmV
dB
mA
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