參數(shù)資料
型號: BGD104
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: PV SERIES
中文描述: 40 MHz - 450 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: SOT115J, 7 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 50K
代理商: BGD104
1999 Mar 22
3
Philips Semiconductors
Product specification
CATV power doubler amplifier module
BGD104
CHARACTERISTICS
Bandwidth 40 to 450 MHz; V
B
= 24 V; T
mb
= 35
°
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 55.25 MHz; V
o
= 46 dBmV;
f
q
= 343.25 MHz; V
q
= 46 dBmV;
measured at f
p
+ f
q
= 398.5 MHz.
Measured according to DIN45004B:
f
p
= 440.25 MHz; V
p
= V
o
;
f
q
= 447.25 MHz; V
q
= V
o
6 dB;
f
r
= 449.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 438.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 450 MHz
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 50 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 445.25 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 55.25 MHz
note 1
d
im
=
60 dB; note 2
f = 40 to 450 MHz
note 3
19.5
20.5
0.5
+135
20.5
22.5
2.5
±
0.3
20
19
18
20
19
18
+225
64
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
S
21
CTB
phase response
composite triple beat
X
mod
cross modulation
66
dB
d
2
V
o
F
I
tot
second order distortion
output voltage
noise figure
total current consumption (DC)
64.5
73
7
435
dB
dBmV
dB
mA
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