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參數(shù)資料
| 型號： | BFY50L |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 55K |
| 代理商： | BFY50L |
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BFY50
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY51
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY52
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 6 V
50
2.5
500
30
50
2.5
500
nA
μ
A
nA
μ
A
nA
μ
A
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
BFY50
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
20
30
20
15
h
FE
DC current gain
BFY51
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
40
25
15
h
FE
DC current gain
BFY52
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
60
30
15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY50 | MEDIUM POWER AMPLIFIER |
| BFY51 | MEDIUM POWER AMPLIFIER |
| BFY50 | Small Signal Transistors |
| BFY51 | Small Signal Transistors |
| BFY52 | Small Signal Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFY51 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BFY51 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| BFY52 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-5 制造商:TT Electronics / Semelab 功能描述:NPN transistor,BFY52 1A Ic 10Vce |
| BFY52 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-5 |
| BFY53 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-5 |
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