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參數(shù)資料
| 型號： | BFU725F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU725F/N1<SOT343F (DFP4)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 136K |
| 代理商： | BFU725F |
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
2 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
[2]
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
4. Marking
Table 4.
Type number
BFU725F/N1
C
CBS
collector-base
capacitance
transition frequency
V
CB
= 2 V; f = 1 MHz
-
70
-
fF
f
T
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V;
f = 5.8 GHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 2 V;
f = 5.8 GHz;
S
=
opt
;
T
amb
= 25
C
-
55
-
GHz
G
p(max)
maximum power gain
[2]
-
18
-
dB
NF
noise figure
-
0.7
-
dB
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
1
2
3
4
mbb159
4
1, 3
2
Ordering information
Package
Name
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU725F/N1
Marking
Marking
B7*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
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|---|---|
| BFU725F,115 | 功能描述:射頻雙極小信號晶體管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFU725F/N1 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F/N1,115 | 功能描述:射頻雙極小信號晶體管 2.8V 0.04A 4-Pin Trans GP BJT NPN RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFU725F_11 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
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