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參數(shù)資料
| 型號(hào)： | BFU710F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU710F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | BFU710F |
BFU710F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 April 2011
5 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
P
L(1dB)
output power at 1 dB gain compression
I
C
= 5 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 10 mA; V
CE
= 1.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
5.5
5
5.5
4.5
-
-
-
-
dBm
dBm
dBm
dBm
IP3
third-order intercept point
-
-
-
-
18
18
18
19.5
-
-
-
-
dBm
dBm
dBm
dBm
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
amb
= 25
°
C.
(1) I
B
= 35
μ
A
(2) I
B
= 30
μ
A
(3) I
B
= 25
μ
A
(4) I
B
= 20
μ
A
(5) I
B
= 15
μ
A
(6) I
B
= 10
μ
A
(7) I
B
= 5
μ
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
V
CE
= 2 V; T
amb
= 25
°
C.
Fig 3.
DC current gain as a function of collector
current; typical values
001aam843
V
CE
(V)
0
3
2
1
4
6
2
8
10
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
I
C
(mA)
0
10
8
4
6
2
001aam844
200
300
100
400
500
h
FE
0
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| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BFU710F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| BFU710F,115-CUT TAPE | 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU710F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BFU725F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F,115 | 功能描述:射頻雙極小信號(hào)晶體管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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