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參數(shù)資料
| 型號： | BFU710F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU710F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BFU710F |
BFU710F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 20 April 2011
3 of 12
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
Type number
BFU710F
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Marking
Marking
D5*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
10
2.8
1.0
10
136
+150
150
Unit
V
V
V
mA
mW
°
C
°
C
T
sp
≤
90
°
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
440
Unit
K/W
Fig 1.
Power derating curve
T
sp
(
°
C)
0
160
120
40
80
001aam842
100
50
150
200
P
tot
(mW)
0
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| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
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參數(shù)描述 |
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| BFU710F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| BFU710F,115-CUT TAPE | 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU710F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BFU725F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F,115 | 功能描述:射頻雙極小信號晶體管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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