參數(shù)資料
型號: BFT93
廠商: NXP Semiconductors N.V.
元件分類: 新型場效應(yīng)晶體管
英文描述: PNP 5 GHz wideband transistor
封裝: BFT93<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù): 5/10頁
文件大?。?/td> 193K
代理商: BFT93
November 1992
5
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
Fig.2 Intermodulation distortion test circuit.
L2 = L3 = 5
H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
handbook, halfpage
MEA383
16
Ω
L2
680 pF
input
75
Ω
240
Ω
680 pF
680 pF
DUT
output
75
Ω
L1
L3
1.2 k
Ω
560
Ω
24 V
390
Ω
Fig.3
DC current gain as a function of collector
current.
V
CE
=
5 V; T
j
= 25
C.
handbook, halfpage
0
40
20
10
20
40
MEA382
30
–IC
FE
h
10
Fig.4
Collector capacitance as a function of
collector-base voltage.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
handbook, halfpage
(pF)
MEA925
0
16
0
1.6
20
1.2
0.4
VCB(V)
4
0.8
8
12
Fig.5
Transition frequency as a function of
collector current.
V
CE
=
5 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
MEA381
0
10
20
40
0
4
–IC
fT
(GHz)
2
30
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