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參數(shù)資料
| 型號： | BFT93 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 新型場效應(yīng)晶體管 |
| 英文描述： | PNP 5 GHz wideband transistor |
| 封裝： | BFT93<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 193K |
| 代理商： | BFT93 |
November 1992
4
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
1
S
22
–
2.
d
im
=
60 dB (DIN 45004B); I
C
=
30 mA; V
CE
=
5 V; R
L
= 75
;
V
p
= V
o
at d
im
=
60 dB; f
p
= 495.25 MHz;
V
q
= V
o
6 dB; f
q
= 503.25 MHz;
V
r
= V
o
6 dB; f
r
= 505.25 MHz;
measured at f
(p
q
r
) = 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
50
UNIT
I
CBO
h
FE
f
T
collector cut-off current
DC current gain
transition frequency
I
E
= 0; V
CB
=
5 V
I
C
=
30 mA; V
CE
=
5 V
I
C
=
30 mA; V
CE
=
5 V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
c
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
2 mA; V
CE
=
5 V; f = 1 MHz
I
C
=
30 mA; V
CE
=
5 V;
f = 500 MHz; T
amb
= 25
C
I
C
=
10 mA; V
CE
=
5 V;
f = 500 MHz; T
amb
= 25
C
see Fig.2 and note 2
20
50
5
nA
GHz
C
c
C
e
C
re
G
UM
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
0.95
1.8
1
16.5
pF
pF
pF
dB
F
2.4
dB
V
o
output voltage
300
mV
G
UM
10 log
2
----------------------------------------------------------
dB.
=
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|---|---|
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