- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378416 > BFT92 (NXP Semiconductors N.V.) PNP 5 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BFT92 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP 5 GHz wideband transistor |
| 封裝： | BFT92<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 192K |
| 代理商： | BFT92 |
November 1992
4
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
----------------------------------------------------------
dB.
log
=
2.
d
im
=
60 dB (DIN 45004B); I
C
=
14 mA; V
CE
=
10 V; R
L
= 75
;
V
p
= V
o
at d
im
=
60 dB; f
p
= 495.25 MHz;
V
q
= V
o
6 dB; f
q
= 503.25 MHz;
V
r
= V
o
6 dB; f
r
= 505.25 MHz;
measured at f
(p
q-r)
= 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
20
50
5
UNIT
I
CBO
h
FE
f
T
collector cut-off current
DC current gain
transition frequency
I
E
= 0; V
CB
=
10 V;
I
C
=
14 mA; V
CE
=
10 V
I
C
=
14 mA; V
CE
=
10 V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
2 mA; V
CE
=
10 V; f = 1 MHz
I
C
=
14 mA; V
CE
=
10 V;
f = 500 MHz; T
amb
= 25
C
I
C
=
5 mA; V
CE
=
10 V;
f = 500 MHz; T
amb
= 25
C
note 2
50
nA
GHz
C
c
C
e
C
re
G
UM
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
0.75
0.8
0.7
18
pF
pF
pF
dB
F
2.5
dB
V
o
output voltage
150
mV
G
UM
10
S
1
1
S
11
–
S
22
2
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFT93W | PNP 4 GHz wideband transistor |
| BFT93W | PNP 4 GHz wideband transistor |
| BFT93 | PNP 5 GHz wideband transistor |
| BFT93 | PNP 5 GHz wideband transistor |
| BFU610F | NPN wideband silicon RF transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFT92 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB T/R |
| BFT92,215 | 功能描述:射頻雙極小信號(hào)晶體管 PNP 25MA 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFT92,215-CUT TAPE | 制造商:NXP 功能描述:BFT92 Series 15 V 300 mW 5 GHz PNP Wideband Transistor SOT-23-3 |
| BFT92 | 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP RF SOT-23 |
| BFT92215 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR PNP -15V 5GHZ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。