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參數(shù)資料
| 型號(hào)： | BFS25 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 5 GHz wideband transistor |
| 中文描述： | 叩5 GHz的寬帶晶體管 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | BFS25 |
December 1997
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
THERMAL RESISTANCE
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°
C, unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 170
°
C; note 1
190 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
3.5
TYP.
80
0.3
5
MAX.
UNIT
I
CBO
h
FE
C
re
f
T
collector cut-off current
DC current gain
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 5 V
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 0; V
CB
= 1 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°
C
Γ
s
=
Γ
opt
; I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°
C
Γ
s
=
Γ
opt
; I
C
= 1 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
°
C
50
200
0.45
nA
pF
GHz
G
UM
maximum unilateral power gain
(note 1)
noise figure
13
dB
F
1.8
dB
2
dB
G
UM
10 log
2
2
1
S
22
2
–
--------------------------------------------------------------
dB.
=
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