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參數資料
| 型號： | BFS25 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 5 GHz wideband transistor |
| 中文描述： | 叩5 GHz的寬帶晶體管 |
| 文件頁數： | 2/11頁 |
| 文件大?。?/td> | 126K |
| 代理商： | BFS25 |
December 1997
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
FEATURES
Low current consumption
Low noise figure
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
PINNING
PIN
DESCRIPTION
Code: N6
base
emitter
collector
1
2
3
Fig.1 SOT323.
handbook, 2 columns
3
1
2
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
3.5
TYP.
80
5
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
8
5
6.5
32
200
V
V
mA
mW
up to T
s
= 170
°
C; note 1
I
C
= 0.5 mA; V
CE
= 1 V; T
j
= 25
°
C
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°
C
I
c
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°
C
I
c
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
T
amb
= 25
°
C
GHz
G
UM
maximum unilateral power gain
13
dB
F
noise figure
1.8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
8
5
2
6.5
32
150
175
V
V
V
mA
mW
°
C
°
C
up to T
s
= 170
°
C; note 1
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