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參數(shù)資料
| 型號(hào)： | BFR92A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封裝： | BFR92A/A2<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR92A/A2<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always P |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | BFR92A |
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
High power gain
Low noise figure
Low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
page
MSB003
Top view
1
2
3
Marking code:
P2
%
.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
0.35
5
14
20
15
25
300
V
V
mA
mW
pF
GHz
dB
T
s
≤
95
°
C
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°
C
d
im
=
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; f
p
+ f
q
f
r
= 793.25 MHz
8
dB
F
noise figure
2.1
dB
V
O
output voltage
150
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
15
2
25
300
+150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
95
°
C; note 1; see Fig.3
Rev. 04 - 2 March 2009
2 of 12
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BFR92A(TR) | 制造商:PHI 功能描述:PHILIPS |
| BFR92A,215 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 25MA 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR92A,235 | 功能描述:射頻雙極小信號(hào)晶體管 Single NPN 15V 25mA 300mW 65 5GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR92A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR92A/DG/B2,215 | 制造商:NXP Semiconductors 功能描述:PHABFR92A/DG/B2,215 NPN 5 GHZ WIDEBAND T |
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