參數(shù)資料
型號: BFR520T
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFR520T<SOT416 (SC-75)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,;
文件頁數(shù): 5/13頁
文件大?。?/td> 272K
代理商: BFR520T
2000 Apr 03
5
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
handbook, halfpage
(dB)
MRC027
10
12
14
16
18
0
10
20
30
IC(mA)
3 V
= 6 V
CE
V
Fig.6
Maximum unilateral power gain as a
function of collector current; typical values.
V
CE
= 6 V; f = 900 MHz; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
(dB)
MRC026
0
5
10
15
20
0
10
20
30
MSG
GUM
Gmax
IC(mA)
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 6 V; f = 2 GHz; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
(dB)
MRC024
0
10
2
10
20
30
40
10
1
1
10
f (GHz)
MSG
GUM
Gmax
Fig.8
Gain as a function of frequency;
typical values.
I
C
= 5 mA; V
= 6 V; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
MRC025
0
10
2
10
20
30
40
10
1
1
10
f (GHz)
MSG
GUM
Gmax
Fig.9
Gain as a function of frequency;
typical values.
I
C
= 20 mA; V
= 6 V; T
= 25
C.
G
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
相關PDF資料
PDF描述
BFR520T NPN 9 GHz wideband transistor
BFR520T NPN 9 GHz wideband transistor
BFR520T NPN 9 GHz wideband transistor
BFR520T NPN 9 GHz wideband transistor
BFR520 NPN 9 GHz wideband transistor
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