參數(shù)資料
型號: BFR520
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFR520<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR520<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR520
文件頁數(shù): 1/14頁
文件大小: 163K
代理商: BFR520
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Applications
RF front end wideband applications in the GHz range
Analog and digital cellular telephones
Cordless telephones (CT1, CT2, DECT, etc.)
Radar detectors
Pagers and satellite TV tuners (SATV)
Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1.
Symbol Parameter
V
CBO
collector-base voltage
V
CES
collector-emitter
voltage
I
C
collector current (DC)
P
tot
total power dissipation
h
FE
DC current gain
C
re
feedback capacitance
BFR520
NPN 9 GHz wideband transistor
Rev. 4 — 13 September 2011
Product data sheet
ST3
Quick reference data
Conditions
Min
-
-
Typ
-
-
Max
20
15
Unit
V
V
R
BE
= 0
-
-
-
120
0.4
70
300
250
-
mA
mW
up to T
sp
= 97
C
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V;
f = 1 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
C
f = 900 MHz
f = 2 GHz
[1]
-
60
-
pF
f
T
transition frequency
-
9
-
GHz
G
UM
maximum unilateral
power gain
-
-
15
9
-
-
dB
dB
相關(guān)PDF資料
PDF描述
BFR520 NPN 9 GHz wideband transistor
BFR520 NPN 9 GHz wideband transistor
BFR520 NPN 9 GHz wideband transistor
BFR520 NPN 9 GHz wideband transistor
BFR520 NPN 9 GHz wideband transistor
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