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參數(shù)資料
| 型號(hào)： | BFR106 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封裝： | BFR106/C<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR106<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 200 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 206K |
| 代理商： | BFR106 |
September 1995
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
base
emitter
collector
1
2
3
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
80
5
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
20
15
100
500
V
V
mA
mW
up to T
s
= 70
C; note 1
I
C
= 50 mA; V
CE
= 9 V; T
amb
= 25
C
I
C
= 50 mA; V
CE
= 9 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
I
C
= 50 mA; V
CE
= 9 V; R
L
= 75
;
T
amb
= 25
C; d
im
=
60 dB;
f
(p
q
r)
= 793.25 MHz
GHz
G
UM
maximum unilateral power gain
11.5
dB
V
o
output voltage
350
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
15
3
100
500
150
175
V
V
V
mA
mW
C
C
up to T
s
= 70
C; note 1
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| BFR520T | NPN 9 GHz wideband transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR106,215 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR106,215-CUT TAPE | 制造商:NXP 功能描述:BFR106 Series 9 V 500 mW 5 GHz Wideband NPN Transistor - SOT23 |
| BFR106 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR106/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFR106_10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
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