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參數(shù)資料
| 型號(hào)： | BFQ67 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 振蕩器 |
| 英文描述： | NPN 8 GHz wideband transistor |
| 封裝： | BFQ67<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | BFQ67 |
1998 Aug 27
2
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
alfpage
MSB003
Top view
1
2
3
Marking code:
V2p.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
100
8
14
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
20
10
50
300
V
V
mA
mW
T
s
97
C; note 1
I
C
= 15 mA; V
CE
= 5 V
I
C
= 15 mA; V
CE
= 8 V
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz
GHz
dB
F
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz
1.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
open emitter
open base
open collector
65
20
10
2.5
50
300
+150
175
V
V
V
mA
mW
C
C
T
s
97
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ67,215 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 50MA 10V 8GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ67,215-CUT TAPE | 制造商:NXP 功能描述:BFQ67 Series 10 V 300 mW 8 GHz Wideband NPN Transistor - SOT-23 |
| BFQ67_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFQ67215 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 10V 8GHZ |
| BFQ67F | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
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