參數(shù)資料
型號: BFQ262
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN video transistors
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁數(shù): 3/12頁
文件大小: 66K
代理商: BFQ262
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistors
BFQ262; BFQ262A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BFQ262
BFQ262A
collector-emitter voltage
BFQ262
BFQ262A
collector-emitter voltage
BFQ262
BFQ262A
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
100
115
V
V
V
CEO
open base
65
95
V
V
V
CER
R
BE
= 100
65
95
110
3
400
5
+150
175
V
V
V
mA
W
°
C
°
C
V
EBO
I
C
P
tot
T
stg
T
j
open collector
T
s
85
°
C; note 1; see Fig.3
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
85
°
C; note 1
18
K/W
相關(guān)PDF資料
PDF描述
BFQ290 TRANSISTOR | BJT | PNP | 190V V(BR)CEO | 250MA I(C) | SOT-172A1
BFQ293 TRANSISTOR | BJT | NPN | 190V V(BR)CEO | 250MA I(C) | SOT-32
BFQ295 TRANSISTOR | BJT | PNP | 190V V(BR)CEO | 250MA I(C) | SOT-128B
BFQ296 TRANSISTOR | BJT | NPN | 190V V(BR)CEO | 250MA I(C) | SOT-128B
BFQ291 TRANSISTOR | BJT | NPN | 190V V(BR)CEO | 250MA I(C) | SOT-172A1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFQ262A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN video transistors
BFQ268/I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 400MA I(C) | SOT-172A3
BFQ270 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 6 GHz wideband transistor
BFQ28 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz
BFQ29 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)