參數(shù)資料
型號(hào): BFQ251
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: PNP video transistor
中文描述: UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 66K
代理商: BFQ251
1998 Oct 06
3
Philips Semiconductors
Product specification
PNP video transistor
BFQ251
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
R
th j-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
85
185
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
65
95
3
20
TYP.
30
2
MAX.
100
20
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
C
cb
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
=
10 mA; I
B
= 0
collector-emitter breakdown voltage I
C
=
10 mA; R
BE
= 100
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector-base capacitance
I
C
=
0.1 mA; I
E
= 0
V
V
V
V
μ
A
μ
A
I
E
=
0.1 mA; I
C
= 0
I
B
= 0; V
CE
=
50 V
I
E
= 0; V
CB
=
50 V
I
C
=
50 mA; V
CE
=
10 V; see Fig.4
I
C
= i
c
= 0; V
CB
=
10 V; f = 1 MHz;
see Fig.5
I
C
=
50; V
CE
=
10 V; see Fig.6
pF
f
T
transition frequency
1
1.3
GHz
Fig.2 DC SOAR.
T
amb
= 25
°
C.
handbook, halfpage
IC
(mA)
0
40
100
300
100
0
200
MEA232 - 1
20
60
80
VCEO (V)
Fig.3 Power derating curve.
handbook, halfpage
(W)
0
50
100
200
0.8
0.6
0.2
0
0.4
MEA228 - 1
150
1.0
Ts (
o
C)
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