參數(shù)資料
型號: BFQ251
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP video transistor
中文描述: UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 66K
代理商: BFQ251
1998 Oct 06
2
Philips Semiconductors
Product specification
PNP video transistor
BFQ251
FEATURES
High breakdown voltages
Low output capacitance
High gain bandwidth
Good thermal stability
Gold metallization ensures
excellent reliability.
APPLICATIONS
Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT54
(TO-92) plastic package.
NPN complement: BFQ231.
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
Fig.1
Simplified outline
(SOT54; TO-92).
page
1
3
2
MSB033
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
T
s
is the temperature at the soldering point of the collector pin, 4 mm from the body.
Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
95
300
1
UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 100
20
30
1.3
V
V
mA
W
T
s
65
°
C; note 1
I
C
=
50 mA; V
CE
=
10 V
I
C
=
50 mA; V
CE
=
10 V; T
amb
= 25
°
C 1
GHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
65
95
3
300
1
+150
150
UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
R
BE
= 100
open collector
65
V
V
V
V
mA
W
°
C
°
C
T
s
65
°
C; notes 1 and 2; see Fig.3
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