參數(shù)資料
型號(hào): BFQ166
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN video transistor
中文描述: Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-4
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 65K
代理商: BFQ166
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ166
FEATURES
Low output capacitance
High gain bandwidth
Good thermal stability
Gold metallization ensures
excellent reliability
High current applicability
Surface mounting.
APPLICATIONS
Video amplifier cascode driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
Fig.1
Simplified outline
(SOT223).
page
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector lead.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
1
TYP.
60
MAX.
UNIT
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 100
20
19
500
2
V
V
mA
W
T
s
105
°
C; note 1
I
C
= 300 mA; V
CE
= 5 V; see Fig.4
I
C
= 300 mA; V
CE
= 5 V; f = 100 MHz;
T
amb
= 25
°
C
GHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
R
BE
= 100
open collector
20
10
19
3
500
2
+150
175
V
V
V
V
mA
W
°
C
°
C
T
s
105
°
C; note 1; see Fig.3
相關(guān)PDF資料
PDF描述
BFQ221 NPN video transistor
BFQ222 NPN video transistor
BFQ225 NPN video transistor
BFQ226 NPN video transistor
BFQ231 NPN video transistors
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