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參數(shù)資料
| 型號(hào)： | BFP196TR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 60K |
| 代理商： | BFP196TR |
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
www.vishay.com
2 (5)
Rev. 2, 29–Jul–02
Document Number 85091
Maximum Thermal Resistance
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Test Conditions
Symbol
R
thJA
Value
180
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 70 mA, I
B
= 7 mA
V
CE
= 8 V, I
C
= 50 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min.
Typ.
Max.
100
100
1
Unit
μ
A
nA
μ
A
V
V
12
0.1
100
0.5
150
50
Electrical AC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min.
6
Typ.
7.5
1.0
0.3
3.5
1.5
Max.
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 900 MHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 900 MHz
V
CE
= 8 V, I
C
= 50 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, Z
0
= 50 ,
f = 900 MHz
V
CE
= 8 V, I
C
= 50 mA, Z
0
= 50 ,
f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, f = 900 MHz
1.4
F
2.5
dB
Power gain
G
pe
16
dB
G
pe
10
dB
Transducer gain
S
21e
2
12.5
dB
S
21e
2
6.5
dB
Third order intercept point at
output
IP
3
36
dBm
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