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參數(shù)資料
| 型號(hào)： | BFP196TR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 60K |
| 代理商： | BFP196TR |
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
1 (5)
www.vishay.com
Document Number 85091
Rev. 2, 29–Jul–02
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise, low distortion broadband amplifiers in
telecommunications and antenna systems and power
amplifiersfor DECT and PCN systems at collector
currents between 20 mA and 80 mA up to 2 GHz
Features
Low noise figure
High transition frequency f
T
= 7.5 GHz
Excellent large signal behaviour
2
1
4
3
13628
BFP196T Marking: 196
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13632
BFP196TW Marking: W96
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
4
3
13629
BFP196TR Marking: R96
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
100
500
150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
60
°
C
–65 to +150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFP196TW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-343 |
| BFP196W | 制造商:Infineon Technologies AG 功能描述:Transistor, NPN, RF 7.5GHz, BFP196W |
| BFP196W_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
| BFP196WE6327 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述: |
| BFP196WE6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN RF 12V SOT-343 |
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