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參數(shù)資料
| 型號： | BFG94 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 封裝： | BFG94<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 281K |
| 代理商： | BFG94 |
September 1995
4
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
----------------------------------------------------------
dB.
log
=
2.
d
im
=
60 dB (DIN 45004B, par 6.3: 3-tone); I
C
= 45 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
O
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; V
r
= V
O
6 dB;
f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
I
C
= 45 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
q
= V
O
= 280 mV;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
(p+q)
= 810 MHz.
I
C
= 45 mA; V
CE
= 10 V; R
L
= 50
; T
amb
= 25
C;
f
p
= 1000 MHz; f
q
= 1001 MHz;
measured at f
(2p
q)
and f
(2q
p
).
3.
4.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
45
90
100
0.9
2.9
0.5
4
UNIT
I
CBO
h
FE
collector cut-off current
DC current gain
I
E
= 0; V
CB
= 10 V
I
C
= 30 mA; V
CE
= 5 V
I
C
= 45 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
e
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 5 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 45 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
s
=
opt
; I
C
= 45 mA; V
CE
= 10 V;
f = 500 MHz
s
=
opt
; I
C
= 45 mA; V
CE
= 10 V;
f = 1 GHz
note 2
note 3
100
2
4.5
0.8
nA
C
c
C
e
C
re
f
T
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
pF
pF
pF
GHz
4
6
GHz
G
UM
maximum unilateral power gain
(note1)
minimum noise figure
11.5
13.5
dB
F
2.7
dB
3
dB
V
O
d
2
output voltage
second order intermodulation
distortion
output power at 1 dB gain
compression
third order intercept point
500
51
mV
dB
P
L1
I
C
= 45 mA; V
CE
= 10 V; R
L
= 50
;
T
amb
= 25
C; measured at f = 1 GHz
note 4
21.5
dBm
ITO
34
dBm
G
UM
10
S
1
1
S
11
–
S
22
2
–
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