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參數(shù)資料
| 型號(hào)： | BFG541 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFG541<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 298K |
| 代理商： | BFG541 |
September 1995
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
0.7
9
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
open emitter
R
BE
= 0
20
15
120
650
250
V
V
mA
mW
up to T
s
= 140
C; note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
C
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
f = 900 MHz; T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
f = 900 MHz; T
amb
= 25
C
pF
GHz
G
UM
maximum unilateral power gain
15
dB
9
dB
S
21
2
insertion power gain
13
14
dB
F
noise figure
1.3
1.8
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
21
dBm
ITO
34
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 0
open collector
65
20
15
2.5
120
650
150
175
V
V
V
mA
mW
C
C
up to T
s
= 140
C; note 1
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 140
C; note 1
55 K/W
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