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參數(shù)資料
| 型號： | BFG325W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 14 GHz wideband transistor |
| 封裝： | BFG325W/XR<SOT343R (CMPAK-4)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 173K |
| 代理商： | BFG325W |
BFG325W_XR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
3 of 13
NXP Semiconductors
BFG325W/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current (DC)
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
[1]
T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
15
6
2
35
210
+175
175
Unit
V
V
V
mA
mW
C
C
T
sp
90
C
[1]
-
65
-
Table 6.
Symbol Parameter
R
th(j-sp)
thermal resistance from junction to solder point
Thermal characteristics
Conditions
T
sp
90
C
Typ
Unit
K/W
[1]
403
Table 7.
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CBS
collector-base capacitance
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
f
T
transition frequency
Characteristics
Conditions
I
E
= 0 A; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 15 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 3 V; T
amb
= 25
C;
Z
S
= Z
L
= 50
f = 1.8 GHz
f = 3 GHz
s
=
opt
; I
C
= 3 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C; Z
S
= Z
L
= 50
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C; Z
S
= Z
L
= 50
Min
-
60
-
-
-
-
Typ
-
100
0.27
0.22
0.49
14
Max
15
200
0.4
-
-
-
Unit
nA
pF
pF
pF
GHz
G
max
maximum power gain
[1]
-
18.3
-
dB
s
21
2
insertion power gain
-
-
-
-
14
10
1.1
8.7
-
-
-
-
dB
dB
dB
dBm
NF
P
L(1dB)
noise figure
output power at 1 dB gain
compression
third order intercept point
IP3
-
19.4
-
dBm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG325W/XR | 制造商:NXP Semiconductors 功能描述:BFG325W/XR NPN 14GHz wideband transistor |
| BFG325W/XR T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG325W/XR,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG325W-XR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 14 GHz wideband transistor |
| BFG325W-XR-1 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 14 GHz wideband transistor |
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