參數(shù)資料
型號: BFE505
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN wideband differential transistor(NPN寬帶差分晶體管)
中文描述: 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-88A, 5 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 59K
代理商: BFE505
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE505
FEATURES
Small size
High power gain at low bias current and voltage
Temperature matched
Balanced configuration
h
FE
matched
Continues to operate at V
CE
< 1 V.
APPLICATIONS
Single balanced mixers
Balanced amplifiers
Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount, 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
PINNING - SOT353B
SYMBOL
PIN
DESCRIPTION
b
1
e
b
2
c
2
c
1
1
2
3
4
5
base 1
emitter
base 2
collector 2
collector 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
5
4
2
Top view
MAM211
c1
c2
e
b1
b2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
C
re
MSG/G
max
feedback capacitance C
BC
maximum power gain
I
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz
I
C
= 5 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 2 mA; V
CE
= 3 V; f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 3 mA; V
CE
= 3 V; f = 2 GHz;
Γ
S
=
Γ
opt
I
C
= 5 mA; V
CE
= 3 V
single loaded
double loaded
0.25
17
10
1.2
0.3
1.7
pF
dB
dB
dB
F
noise figure
1.9
2.1
dB
h
FE
R
th j-s
DC current gain
thermal resistance from
junction to soldering point
60
120
250
230
115
K/W
K/W
相關(guān)PDF資料
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