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參數(shù)資料
| 型號(hào)： | BFC60 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
| 中文描述： | 0.1 A, 1500 V, 140 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | BFC60 |
BFC60
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/96
Characteristic
Drain – Source Breakdown Voltage
Drain – Source On State Resistance
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
Cutoff Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Diode Forward Voltage
Forward Transfer Admittance
Test Conditions
V
GS
= 0V , I
D
= 1mA
V
GS
=10V , I
D
= 50mA
V
DS
= 1200V , V
GS
= 0V
V
GS
= ±20V , V
DS
= 0V
V
DS
= 10V , I
D
= 1.0mA
Min.
1500
Typ.
Max.
Unit
V
μ
A
nA
V
BV
DSS
R
DS(ON)
I
DSS
I
GSS
V
GS(off)
C
iss
C
oss
C
rss
t
on
t
off
V
SD
|Y
FS
|
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
1
2
3
1
1
3.05 (0.120)
2.54 (1.000)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
4.83 (0.190)
6
5
4.83 (0.190)
3.56 (0.140)
1.40 (0.020)
0.51 (0.055)
3.73 (0.147)
1.78 (0.070)
0.99 (0.390)
6
4
1
1
1.02 (0.040)
0.38 (0.015)
2.54 (0.100)
Nom.
5.08 (0.200)
Nom.
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
2
TO220–AC Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate – Source Voltage
Total Power Dissipation
Operating and Storage Junction Temperature Range
V
DS
= 20V
f = 1MHz
V
GS
= 10V
I
D
= 50mA
V
GS
= 0 , I
S
= 0.1A
V
DS
= 20V , I
D
= 50mA
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
1500
0.1
0.2
±20
20
–55 to +150
V
A
A
V
W
°C
140
200
100
±100
3.5
1.5
40
12
3.0
40
400
1.0
100
1.5
50
pF
ns
V
mS
ABSOLUTE MAXIMUM RATINGS
(T
AMB
= 25°C unless otherwise stated)
ELECTRICAL CHARACTERISTICS
(T
AMB
= 25°C unless otherwise stated)
V
DSS
I
D(cont)
R
DS(on)
1500V
0.1A
140
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
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