參數(shù)資料
型號： BFC61
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： 4TH GENERATION MOSFET
中文描述： 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 24K
代理商： BFC61
BFC61
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0V , I
D
= 250
μ
A
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
Min.
1000
Typ.
Max.
Unit
V
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1
2
3
1
1
3.05 (0.120)
2.54 (1.000)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
4.83 (0.190)
6
5
4.83 (0.190)
3.56 (0.140)
1.40 (0.020)
0.51 (0.055)
3.73 (0.147)
1.78 (0.070)
0.99 (0.390)
6
4
1
1
1.02 (0.040)
0.38 (0.015)
2.54 (0.100)
Nom.
5.08 (0.200)
Nom.
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
2
TO220–AC Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
3.6
14.4
±30
125
–55 to 150
300
V
A
A
V
W
°C
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
3.6
4.00
250
1000
±100
2
4
A
μ
A
nA
V
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D(cont)
R
DS(on)
1000V
3.6A
4.00
4TH GENERATION MOSFET
Pin 1
— Gate
Pin 2
— Drain
Pin 3
— Source
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