參數(shù)資料
型號(hào): BFC505
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN wideband cascode transistor
中文描述: 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-88A, 5 PIN
文件頁數(shù): 5/11頁
文件大?。?/td> 82K
代理商: BFC505
1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
Notes
1.
V
B2
= V
C2
E1
/2 + 0.6 V
2.
MSG =
;
3.
4.
Maximum isolation is defined as the isolation when S
21
of the amplifier is reduced to unity (buffer application).
I
C
= 1 mA; V
CE
= 3 V; R
S
= 50
; Z
L
= opt; T
amb
= 25
°
C; f
p
= 900 MHz; f
q
= 902 MHz; measured at
f
(2p
q)
= 904 MHz.
s
12
s
21
k
k
2
1
×
k
1
-----------------------------------------------------s
s
s
×
s
×
21
×
2
s
11
2
s
22
2
2
s
12
s
21
=
Fig.2
Power derating as a function of soldering
point temperature; typical values.
handbook, halfpage
0
50
100
200
400
0
MBG208
150
200
Ptot
(mW)
Ts (
o
C)
double loaded
single loaded
Fig.3
Transition frequency as a function of
collector current; typical values.
f = 1 GHz; T
amb
= 25
°
C.
handbook, halfpage
4
8
9 V
6 V
3 V
MBG209
0
1
10
fT
(GHz)
IC (mA)
10
2
10
1
VC2-E1 = 12 V
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