
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
I
C
= 2.5
μ
A; I
E
= 0
I
C
= 10
μ
A; I
B
= 0
20
8
V
V
V
(BR)EBO
I
CBO
h
FE
I
E
= 2.5
μ
A; I
C
= 0
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
2.5
60
120
50
250
V
nA
AC characteristics of the cascode configuration measured in test circuit (note
1
)
f
T
C
c
C
re2
C
re
MSG
transition frequency
collector capacitance T2
feedback capacitance T2
feedback capacitance
maximum stable power gain;
note 2
I
C
= 5 mA; V
C2-E1
= 3 V; f = 1 GHz
I
E
= i
e
= 0; V
C2-B2
= 0; f = 1 MHz
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
I
C
= 0.25 mA; V
C2-E1
= 1 V;
f = 300 MHz; T
amb
= 25
°
C
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 0.5 mA; V
C2-E1
= 3 V;
f = 300 MHz; T
amb
= 25
°
C
I
C
= 5 mA; V
C2-E1
= 3 V;
f = 900 MHz; T
amb
= 25
°
C
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 900 MHz
I
C
= 5 mA; V
C2-E1
= 3 V;
f = 900 MHz
I
C
= 5 mA; V
C2-E1
= 3 V; f = 2 GHz
I
C
= 0.5 mA; V
C2-E1
= 1 V;
f = 500 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
C2-E1
= 1 V;
f = 2 GHz;
Γ
S
=
Γ
opt
note 4
7.3
0.4
250
25
GHz
pF
fF
fF
dB
10
22
dB
23
dB
insertion power gain
21
dB
16
dB
11
dB
maximum isolation; note 3
40
45
dB
60
68
dB
40
48
1.1
1.4
dB
dB
F
noise figure
1.8
2.1
dB
3.5
dB
IP
3
third order intercept point (input)
20
dBm
s
21
2
s
21
s
12
2