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參數(shù)資料
| 型號： | BF994SB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | CAP CERAMIC 7PF 50V C0G 0603 |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | BF994SB |
July 1993
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF994S
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V; T
amb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
±
6
±
6
4
MAX.
±
50
±
50
±
20
±
20
20
2.5
2
UNIT
I
G1-SS
I
G2-SS
V
(BR)G1-SS
V
(BR)G2-SS
I
DSS
V
(P)G1-S
V
(P)G2-S
gate 1 cut-off currents
gate 2 cut-off currents
gate 1-source breakdown voltage I
G1-SS
=
±
10 mA; V
G2-S
= V
DS
= 0
gate 2-source breakdown voltage I
G2-SS
=
±
10 mA; V
G1-S
= V
DS
= 0
drain-source cut-off voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
V
G1-S
=
±
5 V; V
G2-S
= V
DS
= 0
V
G2-S
=
±
5 V; V
G1-S
= V
DS
= 0
nA
nA
V
V
mA
V
V
V
DS
= 15 V; V
G1-S
= 0; V
G2-S
= 4 V
I
D
= 20
μ
A; V
DS
= 15 V; V
G2-S
= 4 V
I
D
= 20
μ
A; V
DS
= 15 V; V
G1-S
= 0
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
3
UNIT
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
15
18
2.5
1.2
25
1
1
25
mS
pF
pF
fF
pF
dB
dB
C
ig1-s
C
ig2-s
C
rs
C
os
F
G
p
Y
fs
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|---|---|
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| BF995A-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 20V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
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