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參數(shù)資料
| 型號(hào)： | BF994SB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | CAP CERAMIC 7PF 50V C0G 0603 |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | BF994SB |
July 1993
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF994S
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
D(AV)
I
G1-S
I
G2-S
P
tot
T
stg
T
j
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature range
junction temperature
65
20
30
30
±
10
±
10
200
+150
150
V
mA
mA
mA
mA
mW
°
C
°
C
up to T
amb
= 60
°
C; note 1
Fig.2 Power derating curve.
handbook, halfpage
0
200
0
100
MGE792
100
Tamb (
°
C)
Ptot
(mW)
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1.
Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
460
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BF994ST/R | 制造商:PHILIPS-SEMI 功能描述: |
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| BF995A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF995A-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 20V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF995B | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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