參數(shù)資料
型號(hào): BF909WR
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: N-channel dual-gate MOSFET
封裝: BF909WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;BF909WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52
文件頁數(shù): 10/13頁
文件大?。?/td> 180K
代理商: BF909WR
2010 Sep 15
10
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT343R
D
A
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
0
1
2 mm
scale
X
2
1
4
3
Plastic surface-mounted package; reverse pinning; 4 leads
SOT343R
w
M
B
97-05-21
06-03-16
bp
UNIT
A1
max
bp
c
D
E
b1
HE
Lp
Q
w
v
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e1
0.2
y
0.1
0.2
1.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
e1
A
e
y
b1
相關(guān)PDF資料
PDF描述
BF909 N-channel dual-gate MOSFET
BF909 N-channel dual-gate MOSFET
BF909R N-channel dual-gate MOSFET
BF909R N-channel dual-gate MOSFET
BF991 N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF909WR T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF909WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF909WR,135 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 40mA 280mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF909WR115 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
BF926 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR