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參數(shù)資料
| 型號： | BF819 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN high-voltage transistor |
| 中文描述： | 0.1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202 |
| 封裝： | PLASTIC, TO-202, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 56K |
| 代理商： | BF819 |
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BF819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
65
65
300
250
5
100
300
100
1.2
6
+150
150
+150
V
V
V
mA
mA
mA
W
W
°
C
°
C
°
C
T
amb
≤
75
°
C
T
mb
≤
75
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air
62.5
12.5
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 250 V
I
E
= 0; V
CB
= 250 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
45
50
5
100
11
4.5
3.5
nA
μ
A
nA
I
EBO
h
FE
V
CEsat
C
c
C
re
f
T
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
C
= 200 mA; I
B
= 20 mA
collector capacitance
feedback capacitance
transition frequency
V
pF
pF
MHz
I
E
= i
e
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 100 MHz 90
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